Hiorishi Funakubo and other researchers at the Tokyo Institue of Technology have determined ferroelectric properties necessary for halfnium oxide. Halfnium oxide can be split into tiny deposits, meaning that it could be the future of technology. The base of ferroelectric properties are based around the crystal like structure that the element creates. For halfnium oxide researchers knew that an orthorhombic crystal structre would be necessary for halfnium oxide to posess ferroelectric properties. When researching the halfnium oxide the researchers tested for spontaneous polarization and the Curie temperature of compound. The Curie temperature is the temperature at which the compound will stop being ferroelectric because of restructuing of the crystal. The resarchers found that one of the epitaxala films in the compound had a Curie temperature of 450 degrees Celcius. This Curie temperature gives the compound halfnium oxide the potential to be in use for functions of future technology. Ferroelectric materials are unique because their polarization can be reversed by an external electric field. Halnium oxide is unique compared to the other ferroelectric materials tha have been found, because of how small the crystals can be and still posess the properties.
I found this article intersting as in modern day researchers and developers are constantly on the quest to make devices and other computing objects smaller and thinner. When thinking of this I had never thought that it had anything to do with the compounds being used inside the devices. I would always think that the companies simply jsut saved space within the device through efficient design.
https://www.sciencedaily.com/releases/2016/10/161012134011.htm
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